Using synchrotron radiation x-ray multiple diffraction to examine the lattice coherency of semiconductor surfaces and epitaxial layers
Identifieur interne : 019E28 ( Main/Repository ); précédent : 019E27; suivant : 019E29Using synchrotron radiation x-ray multiple diffraction to examine the lattice coherency of semiconductor surfaces and epitaxial layers
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Abstract
An experimental facility for carrying out x-ray multiple diffraction (XRMD) studies in parallel-beam geometry using the Daresbury synchrotron radiation source and its application in the study of coherency of an epilayered sample are described. Experimental high-resolution Renninger scans (RS) about GaAs(006) are presented and the pseudoforbidden ′′Aufhellung′′ eight-beam (000,006,020,042,044,026,024,022) case has been fully resolved for the first time using the setup which involves a double-crystal six-circle scattering geometry and data acquisition providing optimal conditions for these scans to be obtained. A sample of InGaAs/AlGaInAs/InP(001) epilayered material was also examined and high-resolution RS from the bulk, substrate, and epitaxial overlayers were obtained. The diffraction wavelength used was determined directly from the bulk RS as λ=(1.4695±0.0005) A. The data clearly reveal a number of interesting XRMD features which allow for the sample characterization. The layer parallel lattice parameter can be determined either from the epilayer tetragonal distortion in the layer RS or from the MORSI (modulation of the RS intensity due to the presence of the epilayers) [Greenberg & Ladell, Appl. Phys. Lett. 50, 436 (1987)] dips in the substrate RS. These dips can also provide simultaneous information on relative tilt and rotation between both layer/substrate lattices. The fitting of the position and profile of the three-beam surface peaks allows the determination of the layer parallel lattice parameter and the layer mosaic spread on the sample surface plane. © 1996 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Using synchrotron radiation x-ray multiple diffraction to examine the lattice coherency of semiconductor surfaces and epitaxial layers</title><author><name sortKey="Sasaki, J M" uniqKey="Sasaki J">J. M. Sasaki</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IFGW, UNICAMP, CP 6165, 13083-970, Campinas, SP, Brazil</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Brésil</country><wicri:regionArea>IFGW, UNICAMP, CP 6165, 13083-970, Campinas, SP</wicri:regionArea><wicri:noRegion>SP</wicri:noRegion></affiliation></author><author><name sortKey="Cardoso, L P" uniqKey="Cardoso L">L. P. Cardoso</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IFGW, UNICAMP, CP 6165, 13083-970, Campinas, SP, Brazil</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Brésil</country><wicri:regionArea>IFGW, UNICAMP, CP 6165, 13083-970, Campinas, SP</wicri:regionArea><wicri:noRegion>SP</wicri:noRegion></affiliation></author><author><name sortKey="Campos, C" uniqKey="Campos C">C. Campos</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow G1 1XL, United Kingdom</s1><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow G1 1XL</wicri:regionArea><wicri:noRegion>Glasgow G1 1XL</wicri:noRegion></affiliation></author><author><name sortKey="Roberts, K J" uniqKey="Roberts K">K. J. Roberts</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Mechanical and Chemical Engineering, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom</s1><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Department of Mechanical and Chemical Engineering, Heriot-Watt University, Edinburgh EH14 4AS</wicri:regionArea><wicri:noRegion>Edinburgh EH14 4AS</wicri:noRegion></affiliation></author><author><name sortKey="Clark, G F" uniqKey="Clark G">G. F. Clark</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>also at CLRC Daresbury Laboratory, Warrington WA4 4AD, United Kingdom</s1><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>also at CLRC Daresbury Laboratory, Warrington WA4 4AD</wicri:regionArea><wicri:noRegion>Warrington WA4 4AD</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>CLRC Daresbury Laboratory, Warrington WA4 4AD, United Kingdom</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>CLRC Daresbury Laboratory, Warrington WA4 4AD</wicri:regionArea><wicri:noRegion>Warrington WA4 4AD</wicri:noRegion></affiliation></author><author><name sortKey="Pantos, E" uniqKey="Pantos E">E. Pantos</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>CLRC Daresbury Laboratory, Warrington WA4 4AD, United Kingdom</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>CLRC Daresbury Laboratory, Warrington WA4 4AD</wicri:regionArea><wicri:noRegion>Warrington WA4 4AD</wicri:noRegion></affiliation></author><author><name sortKey="Sacilotti, M A" uniqKey="Sacilotti M">M. A. Sacilotti</name><affiliation wicri:level="4"><inist:fA14 i1="06"><s1>IUT-GMP and LPUB, Université de Bourgogne, 21004, Dijon, France</s1><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>IUT-GMP and LPUB, Université de Bourgogne, 21004, Dijon</wicri:regionArea><placeName><region type="région">Bourgogne</region><settlement type="city">Dijon</settlement></placeName><orgName type="university">Université de Bourgogne</orgName><placeName><settlement type="city">Dijon</settlement><region type="region" nuts="2">Région Bourgogne</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0090834</idno><date when="1996-04-01">1996-04-01</date><idno type="stanalyst">PASCAL 97-0090834 AIP</idno><idno type="RBID">Pascal:97-0090834</idno><idno type="wicri:Area/Main/Corpus">018F79</idno><idno type="wicri:Area/Main/Repository">019E28</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Instrumentation</term><term>Measuring methods</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>0785Q</term><term>6110K</term><term>6835B</term><term>Appareillage</term><term>Méthode mesure</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">An experimental facility for carrying out x-ray multiple diffraction (XRMD) studies in parallel-beam geometry using the Daresbury synchrotron radiation source and its application in the study of coherency of an epilayered sample are described. Experimental high-resolution Renninger scans (RS) about GaAs(006) are presented and the pseudoforbidden ′′Aufhellung′′ eight-beam (000,006,020,042,044,026,024,022) case has been fully resolved for the first time using the setup which involves a double-crystal six-circle scattering geometry and data acquisition providing optimal conditions for these scans to be obtained. A sample of InGaAs/AlGaInAs/InP(001) epilayered material was also examined and high-resolution RS from the bulk, substrate, and epitaxial overlayers were obtained. The diffraction wavelength used was determined directly from the bulk RS as λ=(1.4695±0.0005) A. The data clearly reveal a number of interesting XRMD features which allow for the sample characterization. The layer parallel lattice parameter can be determined either from the epilayer tetragonal distortion in the layer RS or from the MORSI (modulation of the RS intensity due to the presence of the epilayers) [Greenberg & Ladell, Appl. Phys. Lett. 50, 436 (1987)] dips in the substrate RS. These dips can also provide simultaneous information on relative tilt and rotation between both layer/substrate lattices. The fitting of the position and profile of the three-beam surface peaks allows the determination of the layer parallel lattice parameter and the layer mosaic spread on the sample surface plane. © 1996 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>79</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Using synchrotron radiation x-ray multiple diffraction to examine the lattice coherency of semiconductor surfaces and epitaxial layers</s1></fA08><fA11 i1="01" i2="1"><s1>SASAKI (J. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>CARDOSO (L. P.)</s1></fA11><fA11 i1="03" i2="1"><s1>CAMPOS (C.)</s1></fA11><fA11 i1="04" i2="1"><s1>ROBERTS (K. 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A.)</s1></fA11><fA14 i1="01"><s1>IFGW, UNICAMP, CP 6165, 13083-970, Campinas, SP, Brazil</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow G1 1XL, United Kingdom</s1><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Mechanical and Chemical Engineering, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom</s1><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>also at CLRC Daresbury Laboratory, Warrington WA4 4AD, United Kingdom</s1><sZ>5 aut.</sZ></fA14><fA14 i1="05"><s1>CLRC Daresbury Laboratory, Warrington WA4 4AD, United Kingdom</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="06"><s1>IUT-GMP and LPUB, Université de Bourgogne, 21004, Dijon, France</s1><sZ>7 aut.</sZ></fA14><fA20><s1>3492-3498</s1></fA20><fA21><s1>1996-04-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>97-0090834</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>An experimental facility for carrying out x-ray multiple diffraction (XRMD) studies in parallel-beam geometry using the Daresbury synchrotron radiation source and its application in the study of coherency of an epilayered sample are described. Experimental high-resolution Renninger scans (RS) about GaAs(006) are presented and the pseudoforbidden ′′Aufhellung′′ eight-beam (000,006,020,042,044,026,024,022) case has been fully resolved for the first time using the setup which involves a double-crystal six-circle scattering geometry and data acquisition providing optimal conditions for these scans to be obtained. A sample of InGaAs/AlGaInAs/InP(001) epilayered material was also examined and high-resolution RS from the bulk, substrate, and epitaxial overlayers were obtained. The diffraction wavelength used was determined directly from the bulk RS as λ=(1.4695±0.0005) A. The data clearly reveal a number of interesting XRMD features which allow for the sample characterization. The layer parallel lattice parameter can be determined either from the epilayer tetragonal distortion in the layer RS or from the MORSI (modulation of the RS intensity due to the presence of the epilayers) [Greenberg & Ladell, Appl. Phys. Lett. 50, 436 (1987)] dips in the substrate RS. These dips can also provide simultaneous information on relative tilt and rotation between both layer/substrate lattices. 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